Analytical and experimental methods for zero-temperature-coefficient biasing of MOS transistors

Q: What does this research mean for the field?

The body voltage significantly influences the zero-temperature-coefficient drain current characteristics of MOSFETs, and modeling this effect enables the design of VLSI CMOS circuits that remain stable over unprecedentedly wide temperature ranges (25–250°C). Novelty: ClaimNovelty.NOVEL_FINDING. Consensus alignment: ConsensusAlignment.NEUTRAL.

F.S. Shoucair

doi:10.1049/el:19890802

August 17, 1989Electronics Letters

Analytical and experimental methods for zero-temperature-coefficient biasing of MOS transistors

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F.S. Shoucair (1989) studied this question.

synapsesocial.com/papers/6aaa688a2c479c3b5271c7d6 https://doi.org/10.1049/el:19890802

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Analytical and experimental methods for zero-temperature-coefficient biasing of MOS transistors

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Analytical and experimental methods for zero-temperature-coefficient biasing of MOS transistors

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