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We demonstrate temperature-independent output characteristics of an optically pumped semiconductor disk laser (SDL) based on quantum dots (QDs) grown in the Stranski-Krastanow regime. The gain structure consists of a stack of 7×3 QD layers, each threefold group being located at an optical antinode position. The SDL emits at 1210nm independent of the pump power density. Threshold and differential efficiency do not dependent on heat sink temperature. Continuous-wave operation close to 300mW output power is achieved using the ground-state transition of the InGaAs QDs.
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Germann et al. (2008) studied this question.
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