GaAs on Si heterostructures obtained by He and/or H implantation and direct wafer bonding

Transfer of GaAs layers onto Si by helium and/or hydrogen implantation and wafer bonding was investigated. The optimum conditions for achieving blistering/splitting only after postimplantation annealing were experimentally obtained. It was found that specific implantation conditions induce large area exfoliation instead of blistering after annealing of unbonded GaAs. This effect is related to a narrow size and/or a depth distribution of the platelets in as-implanted GaAs and their evolution with annealing. The influence of substrate orientation in blistering/splitting of GaAs was also investigated. Thin GaAs layers were transferred onto silicon by a combination of He and/or H implantation, wafer bonding and low temperature annealing.