Answers are grounded in this paper and cite their sources.
For the first time, transfer of a thin monocrystalline GaAs film from its original bulk substrate onto a silicon substrate was achieved by proton implantation and wafer bonding. Successful transfers of 3 in GaAs film are presented.
No takes yet. Share an insight, caveat, or question.
Jalaguier et al. (1998) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: