We demonstrate an optical static random access memory cell that provides read and write functionality at 5 Gb/s. The circuit comprises a hybridly integrated semiconductor optical amplifier-Mach-Zehnder interferometer (SOA-MZI) flip-flop serving as the memory unit and two additional SOA-based cross-gain modulation switches for controlling access to the memory cell.
No takes yet. Share an insight, caveat, or question.
Pleros et al. (2008) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: