Results of the studies of ferroelectric domain structure and domain wall orientation in GASH and LAS single crystals obtained by the electron microscope decoration method are presented. In addition the influence of lattice defects on the domain pattern and the domain wall thickness in TGS is studied together with the domain wall clamping effect. A possible explanation of the AgCl decoration effect in the case of GASH crystals is given.
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Hilczer et al. (1989) studied this question.
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