Using the large maximal current density and the small diameter of carbon nanotubes, a flash memory arrangement is proposed. It makes use of the spin sensitive transport through hybrid conductor junctions. This memory contains no moving mechanical part and a single layer’s theoretical information density can reach beyond 40Gbit∕cm2. It is easy to build a three-dimensional memory structure. Then, the theoretical capacity can reach beyond 1015bit∕cm3 (1000Terrabit∕cm3), which means that a memory with 1cm area and 1mm thickness could have about 10TerraByte capacity.
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Kish et al. (2005) studied this question.
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