The proposed approach, which considers the MOS transistor as a four-terminal device and takes into account short-channel effects, has been implemented in the circuit simulator SPICE. It is shown that the results predicted from this CAD-oriented approach are in good agreement with those achievable with a numerical procedure. It is also found that, using the new model in SPICE, the evaluation of transients in some high-precision circuits gives results significantly different from those expected from standard quasi-static formulations.
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Turchetti et al. (1986) studied this question.
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