Rapid thermal diffusion of phosphorus into p-type silicon from a spin-coated film containing the dopant has been studied as a function of process temperature and time duration. The electron diffusion length measurements performed by the surface photovoltage method present evidence for a gettering phenomena since the diffusion length values of the diffused silicon samples are found to exceed the initial value reported for the virgin material.
No takes yet. Share an insight, caveat, or question.
Hartiti et al. (1991) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: