Deep levels introduced in boron-doped silicon by heat-pulse annealing with a tungsten-halogen flashlamp are investigated using deep level transient spectroscopy. Two majority-carrier trapping levels in the band gap, at Ev+0.32 eV and at Ev+0.45 eV, are observed. These results are compared to those obtained by furnace quenching and laser annealing studies. Both the position in the gap and the annealing kinetics of the hole trap at Ev+0.45 eV suggest that this center is due to an interstitial iron impurity in the lattice. The deep levels are not consistently observed in all flashlamp-annealed Si crystals utilized in the present work.
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Borenstein et al. (1986) studied this question.
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