Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs

We study the impact of positive bias temperature stress and hot carrier stress on lateral 4H-SiC nMOSFETs. These degradation mechanisms are prominent in silicon based devices where both create oxide as well as interface traps. For SiC MOSFETs only limited information regarding these mechanisms is available. We transfer the charge pumping technique, known from Si MOSFETs, reliably to SiC MOSFETs to learn about the nature of the stress induced defects.