The kinetics and the mechanism of the oxidation of the InP(110) surface modified by a cesium monolayer have been studied by valence-band and core-level photoemission spectroscopy using synchrotron radiation. The presence of a Cs monolayer on the InP(110) surface leads to an exceptional enhancement of the oxidation rate by 13 orders of magnitude with formation of phosphates such as InPO₄. In strong contrast with cesiated transition-metal surfaces, we find a precursor state of molecular oxygen prior to the onset of InP(110) oxidation. At higher exposures, both molecular- and atomic-oxygen states coexist in a dynamic equilibrium.
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Soukiassian et al. (1988) studied this question.
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