Effect of gas flow on the growth of In-rich AlInN films by metal-organic chemical vapor deposition

Indium-rich AlInN are grown by metal-organic (MO) chemical vapor deposition using trimethylaluminum, trimethylindium, and ammonia. Under the conservation of MO influx, the effects of gas flow in the MO route on AlInN growth and Al-related parasitic reaction are investigated. With an increase in this gas flow, the suppression of Al-related parasitic reaction, i.e., enhancement in Al content incorporation and improvement of crystalline quality, is satisfactorily shown until the occurring of severe phase separation. Accordingly, Al content x in AlxIn1−xN can be tuned from x=0.02 to 0.26. The Raman spectra of those AlInN samples with phase separation are analyzed by the resonant excitation effect and two-mode behavior for A1(LO). Finally, we propose a phase diagram to interpret the phase separation and Al content evolution under the influence of gas flow.