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The construction of a simple microcomputer-based modulated photocurrent spectroscopy (MPS) system is described. The laborious and time-consuming measurement with a conventional set-up is avoided by the novel use of the combination of a simple and inexpensive computer-controlled pulse generator and a light-emitting diode. Data of localized-state distributions obtained with this system are presented for a amorphous chalcogenide semiconductor, amorphous As 2 Se 3 . The thermally created defect states are found and the defect creation energy is estimated to be 0.64 eV.
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Naito et al. (1991) studied this question.
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