The photoluminescence spectra in Ge 1- x Se x glasses with a composition of 0.5≤ x ≤0.9 along with the optical absorption spectra have been measured. The position of the emission peak is almost independent of the Se composition. The emission intensity, however, is most intense for the composition Ge–Se 2 , indicating the dominant role of GeSe 2 stoichiometric structure of Ge–Se glasses on the radiative recombination. The annealing of samples causes a reduction in the energy range of the tail states and thus an increase in the optical energy gap together with an enhancement of the emission intensity. An absorption band is found in the specral range corresponding to the photoluminescence. The absorption coefficient of the absorption band has a close relation with the emission intensity. A model which is partly based on the recombination edge model is proposed. The localized states near the midgap which act as recombination centers are presumed to be due to structural defects associated with GeSe 4 molecules.
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Shirafuji et al. (1977) studied this question.