Hydrogen ion interactions with silicon carbide and the nucleation of diamond thin films

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Ultrahigh-vacuum surface studies of hydrogen ion interactions with silicon carbide thin films were performed to provide new insights into the mechanisms of diamond thin-film nucleation. These experiments were carried out at room temperature using hydrogen ions with energies of 10, 100, 500, and 2000 eV. In situ analyses using Auger electron spectroscopy indicated that silicon atoms were removed from the surface and near-surface layers of the film, and the resulting carbon-rich layers were converted to a mixture of sp2 and sp3 carbon. The relative amounts of sp2 and sp3 species formed were strongly dependent upon ion energy. The highest concentration of sp3 carbon was obtained using 500 eV ions. Theoretical considerations suggest this behavior was the result of both chemical and energy transfer effects.