A study of the noise performance of gate overlapped polycrystalline silicon thin-film transistors (TFTs) is presented. Low-frequency noise measurements were carried out on n- and p-type samples fabricated by excimer laser crystallization. It is shown that the carrier number fluctuation model applies not only to n-type but also to p-type devices. The density of oxide traps was extracted from the noise measurements and was of the order of 10/sup 18/-10/sup 19/ eV/sup -1/ cm/sup -3/.
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Rahal et al. (2002) studied this question.
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