A physics-based MOSFET noise model for circuit simulators

Discussed is a physics-based MOSFET noise model that can accurately predict the noise characteristics over the linear, saturation, and subthreshold operating regions but which is simple enough to be implemented in any general-purpose circuit simulator. Expressions for the flicker noise power are derived on the basis of a theory that incorporates both the oxide-trap-induced carrier number and correlated surface mobility fluctuation mechanisms. The model is applicable to long-channel, as well as submicron n- and p-channel MOSFETs fabricated by different technologies, and all the model parameters can be easily extracted from routine I-V and noise measurements.>