Thinner liquid phase deposited oxide for polysilicon thin-film transistors

To scale down the gate insulator thickness of polysilicon thin-film transistors (poly-Si TFT's), a thinner oxide is developed by liquid-phase deposition with a small quantity of H/sub 2/O added, producing a rather high-quality oxide. Poly-Si TFT with such a thin oxide reveals good performances in electric characteristics. Thus, the novel thinner oxide is a good candidate as a poly-Si TFT gate insulator in the near future.>