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Solid-state noise signal sources are utilized in various systems for both civilian and military applications. One mechanism that leads to noise fluctuations is interband impact ionization (II). The use of diodes in which impact ionization occurs in strong static fields formed near the cathode contact (cathode domain) is proposed to create noise generators in the frequency range from one to hundreds of GHz. InGaN-based diodes containing a graded gap layer and a low-doping region for the initiation of II and its localization on the cathode are considered. Diodes with a length of 1–4 μm are considered. Their simulation is carried out using a two-dimensional model of the diode and the ensemble Monte Carlo method. The different environmental temperatures and self-heating effects associated with impact ionization and current in diodes are considered. The direct-current and noise characteristics of the diodes were obtained over the external temperature range of 300 to 500 K. The temperature effect on physical processes in the diode and the frequency properties of the generated noise are shown.
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Prykhodko et al. (2025) studied this question.
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