We report the combinatorial study on surface morphology and electrical properties of solution-processed amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The sol-gel-processeda-IGZOthin films typically have shown an amorphous structure and critical dependence of mobility, carrier concentration, and surface roughness on theIn, Ga, andZnmolar ratio in the solution phase. Based on efficient control of the metallic components from the sol-gel process, the solution-processeda-IGZOT FTs with a mobility of 0.5-2 cm2/V ·s, on/off current ratio > 107, and a subthreshold slope of as steep as 1.5 V/dec were obtained.
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Kim et al. (2010) studied this question.
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