High Performance Solution-Processed and Lithographically Patterned Zinc–Tin Oxide Thin-Film Transistors with Good Operational Stability

We demonstrate high mobility and good stability sol–gel-processed and lithographically patterned amorphous zinc–tin oxide (a-ZTO) thin-film transistors (TFTs). The a-ZTO TFTs have shown a carrier mobility with an on/off current ratio greater than and a subthreshold slope . The devices including solution-processed poly(methyl methacrylate)/silica dual passivation layer on the active channel have typically shown threshold voltage variations after 1 h current and voltage bias stressing.