The unexpected SOFC hetero-epitaxial system with large lattice mismatch is demonstrated. A (110)-oriented flat epitaxial film of Nd2NiO4+δ is successfully grown on the (100) surface of yttrium-stabilized zirconia, which realizes selective exposure of the active surface for oxygen reduction. The charge-transfer process is analyzed to be the rate-limiting step with a simple impedance model.
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Yamada et al. (2008) studied this question.
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