Gamma-irradiation-induced modification of hopping conductivity in (TlInSe2)0.9(TlGaTe2)0.1 solid solution

The development of radiation-resistant materials with tunable electrical properties is essential for advanced electronic applications in extreme environments. However, the influence of high-dose gamma irradiation on charge transport mechanisms in Tl-based chalcogenide solid solutions remains insufficiently understood. In this study, we investigate the effect of gamma irradiation on the electrical transport properties of the (TlInSe 2 ) 0.9 (TlGaTe 2 ) 0.1 solid solution. The samples were irradiated at doses of 0, 0.1, 0.25, and 0.5 MGy, and AC and DC conductivities were measured in the temperature range of 100–300 K. The temperature dependence of DC conductivity was analyzed using Arrhenius plots and the Efros–Shklovskii (ES) model, indicating that charge transport is governed by the Mott variable-range hopping (VRH) mechanism. Increasing the radiation dose significantly alters the hopping parameters: the density of localized states ( N F ) and trap concentration ( N t ) increase, while the energy difference between localized states ( ΔE ), hopping energy ( ΔW ), and hopping distance ( R ) decrease. The AC conductivity follows a power-law dependence on frequency ( f 0.8 ). Additionally, the temperature and frequency ranges associated with hopping conduction broaden with increasing irradiation dose. These results demonstrate that gamma irradiation effectively tunes the electrical properties of the material, highlighting its potential for radiation-sensitive and functional electronic devices.