Large-Scale Test Circuits for High-Speed and Highly Accurate Evaluation of Variability and Noise in Metal–Oxide–Semiconductor Field-Effect Transistor Electrical Characteristics

To develop a new process technology for suppressing the variability and noise in metal–oxide–semiconductor field-effect transistors (MOSFETs) for large-scale integrated circuits, accurate and rapid measurement test circuits for the evaluation of a large number of MOSFET electrical characteristics were developed. These test circuits contain current-to-voltage conversion circuits and simple scanning circuits in order to achieve rapid and accurate evaluation for a wide range of measurement currents. The test circuits were fabricated and the variabilities and noises in drain–source current, gate leakage current, and p–n junction leakage current were evaluated using a large-scale test circuit.