Reactively sputtered tantalum nitride (Ta2N) has been investigated as a diffusion barrier between Pd2Si and aluminum and CoSi2 and Al. Ta2N is found to be an excellent matallurgical diffusion barrier for the two systems up to 555 °C, with no intermixing observed in Rutherford backscattering and Auger electron spectroscopic studies. Schottky barrier devices n-Si/Pd2Si/Ta2N/Al were excellent and showed no deterioration after annealing at 500 °C. However, similar devices with CoSi2 contacts and Ta2N barrier showed a creation of high contact resistance between the silicide and the as-deposited nitride.
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Farooq et al. (1989) studied this question.
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