Germanium nanostructures embedded in amorphous SiOx matrices were investigated by different X-ray techniques. We report either randomly distributed or layer-organized arrangements of the nanoclusters or nanocrystals, depending on the sputtering conditions. Recrystallization was found to occur by annealing the films near the melting point of germanium.
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Bläsing et al. (1998) studied this question.
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