Passivation of pigment-grade TiO2particles by nanothick atomic layer deposited SiO2films

Pigment-grade TiO(2) particles were passivated using nanothick insulating films fabricated by atomic layer deposition (ALD). Conformal SiO(2) and Al(2)O(3) layers were coated onto anatase and rutile powders in a fluidized bed reactor. SiO(2) films were deposited using tris-dimethylaminosilane (TDMAS) and H(2)O(2) at 500 °C. Trimethylaluminum and water were used as precursors for Al(2)O(3) ALD at 177 °C. The photocatalytic activity of anatase pigment-grade TiO(2) was decreased by 98% after the deposition of 2 nm SiO(2) films. H(2)SO(4) digest tests were performed to exhibit the pinhole-free nature of the coatings and the TiO(2) digest rate was 40 times faster for uncoated TiO(2) than SiO(2) coated over a 24 h period. Mass spectrometry was used to monitor reaction progress and allowed for dosing time optimization. These results demonstrate that the TDMAS-H(2)O(2) chemistry can deposit high quality, fully dense SiO(2) films on high radius of curvature substrates. Particle ALD is a viable passivation method for pigment-grade TiO(2) particles.