The surface pores of a porous low- k dielectric layer were sealed by a smooth coating of silica just a few nanometers thick. Atomic layer deposition (ALD) of tungsten nitride (WN) onto the smooth silica surface provided a very thin (1.5 nm) barrier to the diffusion of copper. Without the silica sealing layer, ALD WN penetrated through the low- k dielectric. Strong adhesion was demonstrated for the structure Si/porous in which the top four layers were formed by ALD. This structure is stable to at least 400°C and is suitable for making narrow interconnects for future microelectronics.
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Rouffignac et al. (2004) studied this question.
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