Effects of silicon-on-insulator substrate on the residual stress within 3C-SiC/Si thin films

Single-crystalline 3C-SiC heteroepitaxial layers were grown on silicon-on-insulator (SOI) and Si wafers, to investigate effects of SOI substrates on the film quality. Residual stress measurement using a laser scan method and the Raman scattering spectroscopy indicated that internal stress within SiC films on SOI were indeed reduced, when compared with that of SiC films on Si.