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Zero-bias dc negative differential resistance of double barrier quantum well diodes in an ac field is explained. A physical picture is presented in terms of resonant tunneling phenomena. An adiabatic approximation is used limiting the present approach to applied ac frequencies lower than the ultimate device speed which is of the order of 1 THz for AlxGa1−x As/GaAs devices.
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Liu et al. (1987) studied this question.
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