An Ultra-Low-Power 24 GHz Low-Noise Amplifier Using 0.13 μ m CMOS Technology

This study presents an ultra-low-power 24 GHz low-noise amplifier (LNA) using 0.13 μm CMOS technology. We propose of using the minimum noise measure (MMIN) as the guideline to determine the optimal bias and geometry of the transistors in the circuit. The power-constrained simultaneous noise and input matching (PCSNIM) technique is also employed for this design. With the proposed design approach, the LNA achieves a peak gain of 9.2 dB and a minimum NF of 3.7 dB under a supply voltage of 1 V. The associated power consumption is only 2.78 mW.