The fabrication of a blue m -plane GaInN light emitting diode (LED) grown on an m -plane GaN layer grown on a 3-in. patterned sapphire substrate is reported. The output power of the LED was approximately 3 mW at the wavelength of 461 nm, a driving current of 20 mA, and a forward voltage of 3.5 V. This is the first report of nonpolar or semipolar blue LEDs grown on hetero-substrates with milliwatt scale output power.
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Saito et al. (2009) studied this question.
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