High-Power RF MEMS Switched Capacitors Using a Thick Metal Process

This paper presents the design and characterization of a high-power RF microelectromechanical systems switched capacitor. The switch is based on a 4-μm-thick metal plate and four symmetrical springs. The design has low sensitivity to residual stress and stress gradients.S-parameter measurements result inCu=0.01\ pF,Cd=0.63\ pF({Cr}=6.3)$, a power handling$>$10 W using hot switching conditions, and a switching time of$~ {20}\ μ{s}$. The pull-down voltage (${ Vp}=50$–55 V) and release voltage (${ Vr}=25$–30 V) are stable to$+/-$4 V over 25$\ ∘{C}$–125$\ ∘{C}$. The design can be arrayed for$N$-bit switched-capacitor networks. Applications areas are in high-power phase shifters and tunable filters.