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Vanadium oxide films were deposited on Si(100) substrates by reactive DC magnetron sputtering in an O 2 atmosphere. The substrate temperature, oxygen pressure and sputter time were varied and their influence on the stoichiometry was examined. V 2p XPS measurements were used to determine the degree of oxidation of the sputtered vanadium oxide films. Nearly fully oxidized (V 5 + ) vanadium oxide films were deposited over the whole temperature and pressure range. However, at higher sputter pressures, oxidation of the Si substrates occurred, accompanied by reduction of the vanadium oxide stoichiometry. A short Ar + bombardment for removal of surface contamination induced a strong decrease of the V 5 + concentration in the vanadium oxide films.
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Silversmit et al. (2004) studied this question.
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