Crystalline carbon nitride was easily synthesized from CN radicals prepared by the reaction between N atoms and a graphite rod anode in the argon‐nitrogen plasma arc at atmospheric pressure. The deposits on Si (111) wafer substrate were identified as β ‐ C 3 N 4 by the x‐ray diffraction method, and the C‐N bond was detected in the deposit by infrared (IR) spectroscopy and x‐ray photoelectron spectroscopy (XPS). The existence of sp 3 orbital on the C atom in C 3 N 4 is presumed from the XPS spectra of the valence band of the deposit.
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Matsumoto et al. (1994) studied this question.