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Bipolar resistive switching in metal-insulator-metal structures based on a double-layer insulator composed of a layer of yttria-stabilized zirconia (YSZ) containing 12 mol % Y2O3 and a layer of GeO x is studied. It is shown that the incorporation of an additional GeO x layer into the structure leads to a significant decrease in the variation of resistive switching parameters at both negative and positive voltages. Au/Zr/GeO x /YSZ/TiN structures exhibit a high stability of the resistance ratio in high-resistance and low-resistance states during cyclic switching. The studied structures can be used for designing next-generation nonvolatile memory elements.
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Горшков et al. (2014) studied this question.
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