In this paper, a simple and effective method of extracting the values of the parameters of the Angelov nonlinear I(V) model of GaAs HJ‐FETs is presented. In the proposed method, the coefficients of the function ψ are determined from I(V) pulse measurements, using the least‐squares optimization method. The utility of the proposed method is demonstrated by modeling the I(V) characteristic of the different families of packaged medium‐power GaAs HJ‐FETs designed for mobile communications.
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Loo‐Yau et al. (2006) studied this question.
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