Cubic SiC crystals of 4 mm in maximum edge length were produced by heating a mixed powder hexagonal SiC and SiO2 around 2350°C. In this condition, a Si element produced by the reduction of SiO2 played an important role in the growth of the cubic type crystal. Microscope observation of the as-grown surface of crystals revealed that the recrystallization from the hexagonal-to-cubic types occurred through a gas phase, i.e. a vaporization-deposition process.
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Omori et al. (1989) studied this question.
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