Predictable and Scalable Analog Matrix–Vector Multiplication in Memristor Crossbars via Closed‐Form Wire‐Resistance Compensation

Wire resistance in memristor crossbars introduces geometry‐dependent voltage attenuation that degrades analog matrix–vector multiplication (MVM), while parasitic sneak paths further distort output currents as array dimensions scale. Here, we develop a closed‐form distributed line‐resistance model that jointly accounts for horizontal and vertical interconnects as well as parasitic conduction, yielding explicit node‐voltage profiles and a compact analytical description of how interconnect losses modify the effective conductance matrix. Leveraging this predictive framework, computation is kept fully analog and two low‐overhead correction strategies are introduced: (1) a geometry‐aware adjustment of the programmed conductances derived directly from the analytically computed wire‐resistance error; and (2) a four‐configuration symmetry‐averaging scheme that suppresses residual spatial non‐uniformities without requiring any modification to peripheral circuits. Circuit‐ and task‐level evaluations on crossbar arrays demonstrate that, once compensated, MVM errors remain bounded and no longer scale with array size, while accuracy is preserved with a constant corrective overhead of four MVMs per elementary array block, validated up to arrays. By fixing the problem class, correction targets are computed analytically and reused, replacing iterative tuning with predictable operation and enabling reliable analog in‐memory computing at scale.