Comparison between the Theoretical Prediction of Codoping and the Recent Experimental Evidences in p-Type GaN, AlN, ZnSe, CuInS2 and n-Type Diamond

We propose a new valence control method, the “codoping method (using both n- and p-type dopants at the same time)”, for the fabrication of low-resistivity p-type GaN, AlN, ZnSe, CuInS2, and n-type diamond based upon ab initio electronic structure calculations. Based upon the calculation, we proposed the following codoping method to fabricate low-resistivity semiconductors: 1. GaN: SiGa + 2MgGa (or BeGa), H + 2MgGa (or BeGa), and ON + 2MgGa (or BeGa), 2. AlN: ON + 2CN, 3. ZnSe: InZn + 2NSe, ClSe + 2NSe, LiZn + ClSe (or ISe), and TeSe + 2NSe, 4. CuInS2: VCu + InCu + 2P, and 5. diamond: B + 2N, and H + 2P. We compare our prediction with the recent successful codoping experiments to fabricate the low-resistivity p- and n-type wide band-gap semiconductors.