Answers are grounded in this paper and cite their sources.
A model for the dynamic oxygen concentration in silicon melts during Czochralski growth is presented. The model is found to be in good agreement with experimental results and to account for first order effects on both the absolute oxygen concentration and its axial variations in grown crystals. Approaches aimed at achieving controllable and axially uniform oxygen concentration in crystals grown by the method are discussed.
No takes yet. Share an insight, caveat, or question.
Carlberg et al. (1982) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: