Upper Yield Stress of Si Crystals at High Temperatures

The temperature dependence of the upper yield stress in dislocation‐free Czochralski‐grown silicon (CZ‐Si) and float‐zone‐grown silicon (FZ‐Si) crystals and an FZ‐Si crystal of grown‐in dislocations of were obtained at temperatures close to the melting point. The result is compared with those reported at lower temperatures to provide a fundamental knowledge for wafer processing and crystal growth.