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The oxygen content of heat‐treated and quenched SiO 2 ‐ Si ( 1 ) samples has been analyzed by the SIMS technique in order to investigate the temperature dependence of the equilibrium SiO 2 / Si ( 1 ) . A SiO ( s ) phase was predicted by thermodynamical calculations and also verified experimentally. This phase appears in equilibrium with a melt of lower oxygen content than the SiO 2 phase and, when formed, determines the oxygen content of the melt. The existence of the SiO ( s ) phase in a Czochralski silicon crystal growth system was confirmed and the implications are briefly discussed.
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Ekhult et al. (1989) studied this question.
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