A novel AlGaAs/AlAs–TiO2/SiO2 hybrid distributed Bragg reflector is implemented in a planar vertical cavity (top)-surface emitting laser (VCSEL) to control emission (near 850 nm) to a single TEM00-like mode. This structure exhibits ≳30 dB side-mode suppression ratio and constant divergence (or modal profile) throughout its operating range (i.e., the detrimental effects of thermal lensing inherent in implanted VCSELs are eliminated); moreover, a record low threshold voltage ≂1.6 V, (0.16 V above photon energy) is obtained, without sacrificing the producibility of the standard all-epitaxial structure.
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Morgan et al. (1995) studied this question.