STUDY ON PREPARATION AND LUMINESCENCE PROPERTIES OF MONOLAYER MoS2

Monolayer MoS2 exhibits direct bandgap semiconductor properties and excellent optical, electrical, and mechanical properties, which have attracted widespread attention and research.The monolayer MoS2 on sapphire substrate was prepared by CVD method, the effects of preparation temperature and preparation time on the morphology, phase, thickness and uniformity of MoS2 were studied, and the luminescence performance of monolayer MoS2 was tested in this article.It has been shown that preparation temperature and preparation time strongly affect the morphology and thickness of MoS2.Monolayer MoS2 with uniform surface was prepared under the conditions of temperature of 750 ℃ or 760 ℃ and time of 15 minutes or 20 minutes; The microstructure of Monolayer MoS2 is an equilateral triangle with a maximum area of approximately 400 μm2; Monolayer MoS2 emited strong fluorescence upon excitation.