Deep level transient spectroscopy characterization of tungsten-related deep levels in silicon

Deep level transient spectroscopy is used to determine the deep levels introduced by tungsten in the silicon band gap. The experimental results indicate that tungsten creates three defect centers, with levels at Ev+0.22 eV, Ev+0.33 eV, and Ec−0.59 eV. The shape of the concentration profiles indicates that W does not diffuse by a simple mechanism in Si.