The dependence on illumination intensity up to 10 9 W m -2 of photoconductivity (PC) and photoluminescence (PL) has been studied in ZnIn 2 S 4 for two different photon energies (2.07 eV and 2.5 eV; both less than the band gap=2.8 eV). The difference in the PC and PL behaviour for the two photon energies can be attributed to the availability of nonionised acceptors for donor-acceptor (D-A) recombination. The D-A route begins to saturate for excitation with 2.50 eV photons at intensities >or=0.5-20 MW m -2 .
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Crandles et al. (1986) studied this question.
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