High Dielectric Properties of Bi 1.5 Zn 1.0 Nb 1.5 O 7 Thin Films Fabricated at Room Temperature

Paraelectric, pyrochlore thin films of Bi 1.5 Zn 1.0 Nb 1.5 O 7 were fabricated on platinized silicon and Ni‐plated Cu foil by aerosol deposition at room temperature for embedded capacitor applications. The highly dense films thus obtained showed superior dielectric properties without any heat treatment. The dielectric constant and dielectric loss of tan δ of the films at 100 kHz were over 160 and less 0.05, respectively. Furthermore, the films showed markedly superior capacitance density (>100 nF/cm 2 ) and low leakage current density (10 −4 –10 −7 A/cm 2 at 3.0 V). The results demonstrated the promising potential for embedded passive components in printed circuit board applications.