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A high p -type hole-concentration AlAs layer has been successfully grown on a GaAs (311)B substrate by metalorganic chemical vapor deposition with using a Carbon auto-doping technique. The doping concentration was well controlled by changing only V/III ratios. The hole concentration was as high as 2 ×1019 cm-3 at a V/III ratio of 6. A very low resistance of p -type distributed Bragg reflector was obtained with a δ-doping technique to GaAs/AlAs interfaces.
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Mizutani et al. (1997) studied this question.
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